Electronic device comprising an organic semiconducting material

ABSTRACT

The present invention relates to an electronic device comprising at least one organic semiconducting material according to the following formula (I): wherein R 1-4  are independently selected from H, halogen, CN, substituted or unsubstituted C 1 -C 20 -alkyl or heteroalkyl, C 6 -C 20 -aryl or C 5 -C 20 -heteroaryl, C 1 -C 20 -alkoxy or C 6 -C 20 -aryloxy, Ar is selected from substituted or unsubstituted C 6 -C 20 -aryl or C 5 -C 20 -heteroaryl, and R5 is selected from substituted or unsubstituted C 6 -C 20 -aryl or C 5 -C 20 -heteroaryl, H, F or formula (II).

The present invention relates to an organic semiconducting layer,preferably an electronic device, comprising at least one organicsemiconducting material.

FIELD OF THE INVENTION

Conjugated organic compounds have different applications. One importantfield comprises organic semiconductors. Organic semiconductors can beused to fabricate simple electronic components e.g. resistors, diodes,field effect transistors, and also optoelectronic components likeorganic light emitting devices (e.g. OLED), and many others. Theindustrial and economical significance of the organic semiconductors andtheir devices is reflected in the increased number of devices usingorganic semiconducting active layers and the increasing industry focuson the subject.

A simple OLED is demonstrated in U.S. Pat. No. 4,356,429A. There,between conductive electrodes, two semiconductive organic layers arebrought together: one transporting holes and the other one transportingelectrons. The recombination of holes and electrons forms excitons inone or both of the organic layers, the excitons are eventually emittedfollowing the spin statistics. Excitons with triplet spin can also beharvested by using the materials and techniques described in EP1705727.More elaborated OLEDs are described in EP1804309 and US2008182129.

Conjugated organic compounds can be small molecules, for instancemonomers, or oligomers, polymers, copolymers, copolymers of conjugatedand non-conjugated blocks, completely or partially cross-linked layers,aggregate structures, or brush like structures. A device made withdifferent types of compounds, in different layers or mixed together, forexample with polymer and small molecule layers, is also called apolymer—small molecule hybrid device. Organic electronic semiconductorscan also be used in organic electronic devices, and in organic-inorganichybrid devices.

Despite the large electronic gap, usually up to 3 eV, formed between thehighest occupied molecular orbital (HOMO) and the lowest unoccupiedmolecular orbital (LUMO) of the molecule, it is normally still lowenough such that both positive and negative charge carriers can beinjected by special electrodes. Typical organic semiconducting compoundsmay have a gap that is still high enough so that the compounds areoptically active.

Organic field effect transistors are explained, for example, in U.S.Pat. No. 7,026,643, US2005146262 and US2008230776. The resistance of asemiconductive layer that is contacted by two electrodes (source anddrain) can be controlled by the voltage that is applied to the gate. Thegate is displaced on an insulator that is displaced parallel in contactto the semiconductive layer. Various geometries can be used, such asbottom gate (on the substrate), top gate (on the opposite side of thesemiconductive layer relative to the substrate) or on both sides. Manydifferent arrangements of layers can be used such as bipolar layers,injection layer, insulating layer between electrode and semiconductivelayer to lower the off current, etc.

BACKGROUND OF THE INVENTION

Different functional layers in different organic semiconductor devicesrequest a variety of special characteristics.

For instance organic thin-film transistors (OTFTs) need high mobilitymaterials in their active channel. Transparent circuits, such astransparent OTFTs require that the high mobility organic material alsocomprises a wide electronic band gap; the electric injection of holesand/or electrons must be still provided.

OLEDs require transparent transport layers, with high conductivity. Thetransparency is necessary in those opto-electric devices to avoid nondesired absorption of the light. These so called “window” materials canbe used as transport layers, exciton or charge blocking layers. Thethickness of the layers made with the window materials is used to adjustthe micro cavity of the OLEDs in such a way that the outcoupled emissionof the OLED is a maximum. The non-optically active layers of all kindsof semiconductor devices can be exchanged for window materials in orderto fabricate fully transparent components and circuits (e.gUS20060033115). The functionality and nomenclature of the layers aretypical as used in the field. Further explanation can be found inUS2006244370.

Electronic devices also need high stability towards temperature, meaningthat the intrinsic properties of the amorphous organic semiconductingmaterials, such as triphenyl amine derivatives, or phenantroninederivatives, must include a high glass transition temperature (Tg) andhigh temperature stability in the device.

The performance characteristics of (opto)electronic multilayeredcomponents are determined by the ability of the layers to transport thecharge carriers, amongst others. In the case of light-emitting diodes,the ohmic losses in the charge transport layers during operation areassociated with their conductivity. The conductivity directly influencesthe operating voltage required and also determines the thermal load ofthe component. Furthermore, depending on the charge carrierconcentration in the organic layers, a bending of the band in thevicinity of a metal contact results which simplifies the injection ofcharge carriers and can therefore reduce the contact resistance.

By electrically doping hole transport layers with a suitable acceptormaterial (p-doping) or electron transport layers with a donor material(n-doping), respectively, the density of charge carriers in organicsolids (and therefore the conductivity) can be increased substantially.Additionally, analogous to the experience with inorganic semiconductors,applications can be anticipated which are precisely based on the use ofp- and n-doped layers in a component and otherwise would be notconceivable. The use of doped charge-carrier transport layers (p-dopingof the hole transport layer by admixture of acceptor-like molecules,n-doping of the electron transport layer by admixture of donor-likemolecules) in organic light-emitting diodes is described in US2008203406and U.S. Pat. No. 5,093,698.

US2008227979 discloses in detail the doping of organic transportmaterials, also called matrix, with inorganic and with organic dopants.Basically, an effective electronic transfer occurs from the dopant tothe matrix increasing the Fermi level of the matrix. For an efficienttransfer in a p-doping case, the LUMO energy level of the dopant must bemore negative than the HOMO energy level of the matrix or at leastslightly more positive, not more than 0.5 eV, to the HOMO energy levelof the matrix. For the n-doping case, the HOMO energy level of thedopant must be more positive than the LUMO energy level of the matrix orat least slightly more negative, not lower than 0.5 eV, to the LUMOenergy level of the matrix. It is furthermore desired that the energylevel difference for energy transfer from dopant to matrix is smallerthan +0.3 eV.

Typical examples of doped hole transport materials are:copperphthalocyanine (CuPc), which HOMO level is approximately −5.2 eV,doped with tetrafluoro-tetracyanoquinonedimethane (F4TCNQ), which LUMOlevel is about −5.2 eV; zincphthalocyanine (ZnPc) (HOMO=−5.2 eV) dopedwith F4TCNQ; a-NPD (N,N′-Bis(naphthalen-1-yl)-N,N-bis(phenyl)-benzidine)doped with F4TCNQ.

Typical examples of doped electron transport materials are: fullereneC60 doped with acridine orange base (AOB);perylene-3,4,9,10-tetracarboxylic-3,4,9,10-dianhydride (PTCDA) dopedwith leuco crystal violet;2,9-di(phenanthren-9-yl)-4,7-diphenyl-1,10-phenanthroline doped withtetrakis(1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidinato)ditungsten(II) (W(hpp)₄); naphthalene tetracarboxylic acid di-anhydride (NTCDA)doped with 3,6-bis-(dimethyl amino)-acridine; NTCDA doped withbis(ethylene-dithio) tetrathiafulvalene (BEDT-TTF).

There is a technical challenge to provide electron transport materials(ETM) and emitter host (EMH) materials that have a sufficiently lowlaying LUMO level so that they can be doped, and still have a highenough laying LUMO level which can efficiently transfer charge toemitter host (in case of an ETM) and transfer energy to the emitterdopant (in case of EMH). The limitation for high laying LUMO level ofthe ETL is given by the dopability, since the n-dopants with very highHOMO tend to be unstable; also the injection is difficult for very highLUMO of the ETL.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide a semiconductinglayer, preferably an electronic device, comprising a specific class offunctional materials which can be utilized as organic semiconductingmaterials to overcome the drawbacks of the prior art. Especially, anelectronic device shall be provided comprising transparent organicsemiconducting materials which are additionally thermally stable and/ordopable. Further, the electronic device shall comprise semiconductingmaterials which can be synthesized without any difficulties.

This object is achieved by a compound according to formula (I) and anelectronic device comprising at least one organic semiconductingmaterial according to the following formula (I):

wherein R₁₋₄ are independently selected from H, halogen, CN, substitutedor unsubstituted C₁-C₂₀-alkyl or heteroalkyl, C₆-C₂₀-aryl orC₅-C₂₀-heteroaryl, C₁-C₂₀-alkoxy or C₆-C₂₀-aryloxy,Ar is selected from substituted or unsubstituted C₆-C₂₀-aryl orC₅-C₂₀-heteroaryl, andR5 is selected from substituted or unsubstituted C₆-C₂₀-aryl orC₅-C₂₀-heteroaryl, H, F or

Preferably, Ar and R₁₋₄ are independently selected from C₆-C₂₀-aryl andC₅-C₂₀-heteroaryl.

More preferably heteroaryl is a C5-C20 condensed ring structure in whichone or two C are substituted by N or S.

In a further preferred embodiment, R₅ is H or F and combines with Ar toa moiety selected from

TABLE 1

It is clear from the above formulae that the open bonds are, as well asin the other compounds illustrated within this application, not to beunderstood to be methyl, but this open bond is the one performing thecovalent bond to the residual moiety of formula (I).

In another preferred embodiment, compounds according to formula (I) areprepared with R₅≠H or F, but with Ar being C6-C20-aryl orC5-C20-heteroaryl; preferably Ar having the structures as illustratedabove, and wherein preferably R1-R4 is H, C6-C20-aryl orC5-C20-heteroaryl.

In a further preferred embodiment, Ar is selected from

TABLE 2

In a further preferred embodiment, Ar is selected from Table 2 andcombines with R5 which is selected from Table 1.

It is preferred that the device is an electronic, optoelectronic orelectroluminescent device having an electronically functionallyeffective region, wherein the electronically effective region comprisesat least one compound according to formula (I) as defined above.

Even preferred, the device has a layered structure and at least onelayer comprises at least one compound according to formula (I) asdefined above.

Most preferred, the organic semiconducting material is doped by ann-dopant.

In another embodiment, the device with a layered structure has at leasttwo layers of the organic semiconducting material comprising a compoundof formula (I), one n-doped and the other undoped. Preferably bothlayers are in direct contact.

The organic semiconducting material may be doped by an organic n-dopantwhich dopant has HOMO energy level which is more positive than −3.3 eV.

The device may be preferably an organic light-emitting diode, afield-effect transistor, a sensor, a photodetector, an organic thin-filmtransistor, an organic integrated circuit, an organic light-emittingtransistor, a light-emitting electrochemical cell or an organic laserdiode. It was found out that the organic semiconducting materialscomprising a compound of formula (I) are especially suitable to be usedin electron transport layers in OLEDs.

According to the invention are also compounds according to formula (I),except for the compound in which R5=H and Ar is

Most preferred structures of the compound of formula (I) can be asfollows in table 3:

TABLE 1

Structure 1

Structure 2

Structure 3

Structure 4

Structure 5

Structure 6

Structure 7

Structure 8

Structure 9

Structure 10

Structure 11

Structure 12

Structure 13

Structure 14

Structure 16

Structure 17

Structure 18

Structure 19

Structure 20

Structure 21

Structure 22

Structure 23

Structure 24

Structure 25

Structure 26

Structure 27

Structure 28

Structure 29

Structure 30

Structure 31

Structure 32

Structure 33

As can be taken from above list, Ar and can be selected from a number ofdifferently substituted or unsubstituted C₆-C₂₀-aryl orC₅-C₂₀-heteroaryl. Suitable substituents may be for example halogen,such as Br, Aryl, pyrene, or CF₃.

An organic n-dopant can be, for example, selected from the dopants asdisclosed in EP 2002492 A1, US 2007252140 or US 2009212280.

According to the invention is also an electronic device comprising anorganic semiconducting material comprising at least one organic matrixmaterial which is optionally doped with at least one dopant, wherein thematrix material comprises at least one compound according to formula(I).

In a light-emitting diode the compounds according to formula (I) can beused in electron transport layers, which might be optionally doped. Thecompounds can be also used in light-emitting diodes in interlayers suchas hole blocking layers.

According to the invention, the compounds are preferably used in theelectron transport layer and not as main compound of the emitter layer,preferably they are not used in the emitter layer at all.

According to the invention, especially a window semiconducting organicmaterial is provided for the device that can be electrically dopedachieving a high conductivity while it remains highly transparent in thevisible spectra and has a high thermal stability.

According to the invention, also an organic field-effect transistor canbe provided comprising at least one compound according to formula (I)for use in a transport layer, in other words, in the semiconductingchannel layer. An organic field effect transistor may also comprise atleast one compound as disclosed as electronically inert buffer layer,when no charge is injected due to high potential barrier. An organicfield effect transistor may also comprise at least one compound asdisclosed as doped injection layer.

The compounds used in this invention according to formula (I) can beused in OLEDs in electron transport layers as a neat layer, or as adoped layer in combination with a redox dopant. The compounds can alsobe used in mixture with other electron transport materials, with otherhole transport materials or with other functional materials such asemitter dopants. The compounds can be used as hole blocking layers.Advantageous effects are seen over the prior art since the materialshave a higher glass transition temperature compared to materialsdescribed in the prior art, such as in DE 10 2007 012 794 or EP 2072517.

The use of the compounds according to formula (I) provides high thermalstability, especially due to high glass transition temperature, a goodLUMO position for organic light-emitting devices, good dopability,conductivity and charge carrier mobility, high transparency, and easysynthesis. Further, preparation of these compounds can be conducted in avery cost-effective manner. Finally, it can be pointed out that thesynthesis of such compounds offers a high flexibility to changeindependently the R and X, Ar₁ or Ar₂ groups which opens access to morecomplex compounds and therefore to different physical/chemicalproperties resulting in a fine tuning thereof.

It was surprisingly found that especially the thermal stability of dopedlayers comprising a compound as disclosed can be significantly increasedin the devices according to the present invention comprising matrixmaterial. Especially, a glass transition temperature of over 100° C. wasachieved with the compounds shown in the examples. The combination ofsuch a high glass temperature, the wide gap and the dopability makethose compounds to have a high industrial relevance for use in organicelectronic devices.

The properties of the many different used materials can be described bythe position of their highest occupied molecular orbital energy level(HOMO, synonym of ionization potential), and the lowest unoccupiedmolecular orbital energy level (LUMO, synonym of electron affinity).

A method to determine the ionization potentials (IP) is the ultravioletphoto spectroscopy (UPS). It is usual to measure the ionizationpotential for solid state materials; however, it is also possible tomeasure the IP in the gas phase. Both values are differentiated by theirsolid state effects, which are, for example the polarization energy ofthe holes that are created during the photo ionization process. Atypical value for the polarization energy is approximately 1 eV, butlarger discrepancies of the values can also occur. The IP is related tobeginning of the photoemission spectra in the region of the largekinetic energy of the photoelectrons, i.e. the energy of the most weaklybounded electrons. A related method to UPS, the inverted photo electronspectroscopy (IPES) can be used to determine the electron affinity (EA).However, this method is less common. Electrochemical measurements insolution are an alternative to the determination of solid stateoxidation (Eox) and reduction (Ered) potential. An adequate method isfor example the cyclo-voltammetry. Empiric methods for the extraction ofthe solid state ionization potentials are known from the literature.There are no known empiric equations for the conversion of reductionpotentials into electron affinities. The reason for that is thedifficulty of the determination of the electron affinity. Therefore, asimple rule is used very often: IP=4.8 eV+e*Eox (vs.Ferrocen/Ferrocenium) and EA=4.8 eV+e*Ered (vs.Ferrocen/Ferrocenium)respectively (see B. W. Andrade, Org. Electron. 6, 11 (2005) and Refs.25-28 therein). Processes are known for the correction of theelectrochemical potentials in the case other reference electrodes orother redox pairs are used (see A. J. Bard, L. R. Faulkner,“Electrochemical Methods: Fundamentals and Applications”, S. 1-28, andS. 239-247, Wiley, 2. Ausgabe 2000). The information about the influenceof the solution used can be found in N. G. Connelly et al., Chem. Rev.96, 877 (1996). It is usual, even if not exactly correct to use theterms “energy of the HOMO” E(HOMO) and “energy of the LUMO” E(LUMO)respectively as synonyms for the ionization energy and electron affinity(Koopmans Theorem). It has to be taken in consideration, that theionization potentials and the electron affinities are given in such away that a larger value represents a stronger binding of a released orrespectively of an absorbed electron. The energy scale of the molecularorbitals (HOMO, LUMO) is opposed to this. Therefore, in a roughapproximation, is valid: IP=−E (HOMO) and EA=E(LUMO). The givenpotentials correspond to the solid-state potentials. Hole transportlayers, including the respective blockers, mostly have HOMO in the rangefrom −4.5 to −5.5 eV (below the vacuum level) and LUMO in the range of−1.5 eV to −3 eV. The HOMO levels of the emitter materials are in therange of −5 eV to −6.5 eV, and the LUMO in the range from −2 to −3 eV.Electron transport materials, including their respective blockers, havetheir HOMO in a range of −5.5 eV to −6.8 eV and LUMO in the range of−2.3 eV to −3.3 eV. The work function of the contact materials is around−4 to −5 eV for the anode and −3 to −4.5 eV for the cathode.

The dopant donor is a molecule or a neutral radical or combinationthereof with a HOMO energy level (ionization potential in solid state)more positive than −3.3 eV, preferably more positive than −2.8 eV, morepreferably more positive than −2.6 eV. The HOMO of the donor can beestimated by cyclo-voltammetric measurements. An alternative way tomeasure the reduction potential is to measure the cation of the donorsalt. The donor has to exhibit an oxidation potential that is smallerthan or equal to −1.5 V vs Fc/Fc+ (Ferrum/Ferrocenium redox-pair),preferably smaller than −1.5 V, more preferably smaller than or equal toapproximately −2.0 V, even more preferably smaller than or equal to −2.2V. The molar mass of the donor is in a range between 100 and 2000 g/mol,preferably in a range from 200 and 1000 g/mol. The molar dopingconcentration is in the range of 1:10000 (dopant molecule:matrixmolecule) and 1:2, preferably between 1:100 and 1:5, more preferablybetween 1:100 and 1:10. In individual cases doping concentrations largerthan 1:2 are applied, e.g. if large conductivities are required. Thedonor can be created by a precursor during the layer forming(deposition) process or during a subsequent process of layer formation(see DE 10307125.3). The above given value of the HOMO level of thedonor refers to the resulting molecule or molecule radical.

A dopant acceptor is a molecule or a neutral radical or combinationthereof with a LUMO level more negative than −4.5 eV, preferably morenegative than −4.8 eV, more preferably more negative than −5.04 eV. TheLUMO of the acceptor can be estimated by cyclo-voltammetricmeasurements. The acceptor has to exhibit a reduction potential that islarger than or equal to approximately −0.3 V vsFc/Fc+(Ferrum/Ferrocenium redox-pair), preferably larger than or equalto 0.0 V, preferably larger than or equal to 0.24 V. The molar mass ofthe acceptor is preferably in the range of 100 to 2000 g/mol, morepreferably between 200 and 1000 g/mol, and even more preferably between300 g/mol and 2000 g/mol. The molar doping concentration is in the rangeof 1:10000 (dopant molecule:matrix molecule) and 1:2, preferably between1:100 and 1:5, more preferably between 1:100 and 1:10. In individualcases doping concentrations larger than 1:2 are applied, e.g. if largeconductivities are required. The acceptor can be created by a precursorduring the layer forming (deposition) process or during a subsequentprocess of layer formation. The above given value of the LUMO level ofthe acceptor refers to the resulting molecule or molecule radical.

By using the term doping it is meant electrical doping as explainedabove. This doping can also be called redox-doping or charge transferdoping. It is known that the doping increases the density of chargecarriers of a semiconducting matrix towards the charge carrier densityof the undoped matrix. An electrically doped semiconductor layer alsohas an increased effective mobility in comparison with the undopedsemiconductor matrix.

The conductivity can be, for example, measured by the so-called 2-pointor 4-point-method. Here, contacts of a conductive material, such as goldor indium-tin-oxide, are disposed on a substrate. Then, the thin film tobe examined is applied onto the substrate, so that the contacts arecovered by the thin film. After applying a voltage to the contacts thecurrent is measured. From the geometry of the contacts and the thicknessof the sample the resistance and therefore the conductivity of the thinfilm material can be determined. The four point or two point method givethe same conductivity values for doped layers since the doped layersgrant a good ohmic contact.

The temperature stability can also be measured with that method in whichthe (undoped or doped) layer is heated stepwise, and after a waitingperiod, the conductivity is measured. The maximum temperature, which canbe applied to the layer without loosing the desired semiconductingproperties, is then the temperature just before the conductivity breaksdown. For example, a doped layer can be heated on the substrate with twoelectrodes, as disclosed above, in steps of 1° C., wherein after eachstep there is a waiting period of 10 seconds. Then the conductivity ismeasured. The conductivity changes with temperature and breaks downabruptly at a particular temperature. The temperature stability istherefore the temperature up to which the conductivity does not breakdown abruptly. The measurement is performed in vacuum.

In another aspect of the invention, the compounds according to formula(I) are used in an organic light emitting diode as electron transportmaterials in an ETL which is undoped (not electrically doped). Inanother aspect, the ETL is mixed with an organometallic-complex,preferentially a Li compound, such as LiQ. In such cases, it ispreferred that the transporting host of the emitting layer ispreferentially electron transporting, either because it has higherelectron mobility or because electrons are more easily injected thanholes, due to the HOMO and LUMO energy levels of the emitting layer hostand its adjacent layer's hosts. In still another aspect, the ETLconsists of the compound according to formula (I).

Additional features and advantages of the invention can be taken fromthe following detailed description of preferred embodiments, togetherwith the drawings as attached.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a cross section of a typical exemplary small molecule OLED.

The organic electronic device of the present invention may be an organiclight emitting diode. FIG. 1 shows a typical layer structure of anorganic light emitting diode. The layers are disposed on a substrate(10) in the following order: anode (11), p-doped hole transport layer(12), electron blocking layer (13), emission layer (14), hole blockinglayer (15), n-electron transport layer (16), and cathode (17). Two ormore layers can collapse into a smaller number of layers if propertiescan be combined. Inverted structure and multiple stacked OLEDs are alsowell known in the field. The emission layer is usually composed by anemitter matrix material and an emitter dopant; this layer can be alsocomposed by several other layers to generate light with a broad spectrumcombining several emitters, for example, to generate white light.

EXAMPLES General Synthesis Method

Of course, the R's in the above general synthesis scheme shall stand forR₁₋₄ according to formula (I). Additionally, Ar shall in this generalsynthesis scheme be understood to stand for the moiety “Ar—R₅” accordingto formula (I).

R1-4 are independently introduced in steps 1 and/or 2 of the generalsynthesis scheme by choosing the proper tetralone derivative (such as6-fluoro-3,4-dihydro-7-methoxy-1(2H) naphthalenone or3,4-dihydro-5,8-dimethyl-1(2H)-naphthalenone, or6,7-dichloro-3,4-dihydro 1(2H)-naphthalenone, or,3,4-dihydro-6-nitro-1(2H)-naphthalenone, or3,4-dihydro-7-phenyl-1(2H)-naphthalenone which are all commercialmaterials.

Example 1 Synthesis of

First Step:

Synthesis of 2-benzylidene-3,4-dihydronaphthalen-1(2H)-one (1). Allmanipulations were carried out in air, without any further purificationof commercial solvents/chemicals.

A 250 mL flask was charged with tetralone (4 g, 27.4 mmol) andbenzaldehyde (3.88 g, 36.6 mmol). This was dissolved in warmtetrahydrofuran (15 mL), and to this yellow solution was slowly added a4 wt % solution of KOH in methanol (125 mL). The reaction was stirredfor 4 days at room temperature. The solvent was then removed underreduced pressure, and it was poured into 150 mL of water and extractedwith methylene chloride. The organic extract was dried over magnesiumsulfate and filtered, and the solvent was removed at reduced pressure toafford 4.1 g (64%) as white powder.

NMR: 1H NMR (500 MHz, CD2Cl2) δ 8.01 (dd, J=64.7, 65.4, 2H), 7.71-6.92(m, 8H), 3.39-2.64 (m, 4H).

Second Step:

Synthesis of 7-phenyl-5,6,8,9-tetrahydrodibenzo[c,h]acridine (2). Allmanipulations were carried out under argon.

1 (2.9 g, 12.4 mmol) and tetralone (1.7 g, 11.6 mmol) are introduced ina flask together with BF3.Et2O (1.8 mL, 14.2 mmol). The mixture isstirred at 100° C. for 4 hours and cooled to room temperature. Et2O wasadded (15 mL) and the mixture is stirred for an additional hour. Theprecipitate is filtered and washed with Et2O (15 mL). This powder (1.9g) is then introduced at 0° C. in a flask together with aammonia-ethanol solution. The mixture was allowed to stir at roomtemperature for 6 h, the solid was filtered and washed several timeswith ethanol. 1.4 g (34% yield) of a white powder was obtained.

Third Step:

Synthesis of 7-phenyldibenzo[c,h]acridine (3). All manipulations werecarried out under argon with dry solvents.

2 (1.55 g, 4.31 mmol) was dissolved in 100 mL dioxane and2,3-dichloro-5,6-dicyanobenzoquinone was added (6.88 g, 30.3 mmol). Themixture was refluxed under argon for 2 days. The reaction mixture wasthen cooled to room temperature, poured in 300 mL saturated aqueoussodium carbonate solution and stirred at 65° C. for 30 min. The mixturewas then cooled to room temperature, the precipitation was filtered andwashed with water and methylene chloride. Yield: 1.1 g (72%).

1H NMR (500 MHz, CD2Cl2) δ 8.02-7.94 (m, 4H), 7.86 (dd, J=1.2, 7.8, 2H),7.71 (ddd, J=5.9, 11.0, 25.9, 3H), 7.45 (dd, J=7.3, 8.4, 4H), 7.20 (d,J=8.7, 2H), 7.05 (ddd, J=1.5, 7.0, 8.6, 2H).

Example 2 Synthesis of

First Step:

Synthesis of (E)-2-(4-bromobenzylidene)-3,4-dihydronaphthalen-1(2H)-one(4). All manipulations were carried out in air, without any furtherpurification of commercial solvents/chemicals.

A 250 mL flask was charged with tetralone (3.22 g, 22 mmol) and4-bromobenzaldehyde (5.3 g, 28.6 mmol). This was dissolved in warmtetrahydrofuran (12 mL), and to this yellow solution was slowly added a4 wt % solution of KOH in methanol (100 mL). The reaction was stirredfor 4 days at room temperature. The mixture was concentrated and reducedto approx 10% vol. The residue was filtered and washed with MTBE (3*50mL), dried, to afford a light yellow powder (6.61 g, 96%).

Second Step:

Synthesis of 7-(4-bromophenyl)-5,6,8,9-tetrahydrodibenzo[c,h]acridine(5). All manipulations were carried out under argon.

4 (6.54 g, 20.9 mmol) and tetralone (2.93 g, 20.0 mmol) are introducedin a flask together with BF3.Et2O (3 mL, 23.7 mmol). The mixture isstirred at 100° C. for 4 hours and cooled to room temperature. Et2O wasadded (25 mL) and the mixture is stirred for an additional hour. Theprecipitate is filtered and washed with Et₂O (20 mL). This powder (3.8g) is then introduced at 0° C. in a flask together with anammonia-ethanol solution. The mixture was allowed to stir at roomtemperature for 5 h, the precipitate was filtered and washed severaltimes with ethanol.

2.98 g (34% yield) of a white powder was obtained.

Third Step:

Synthesis of 7-(4-bromophenyl)dibenzo[c,h]acridine (6). Allmanipulations were carried out under argon with dry solvents.

2 (2.98 g, 6.80 mmol) was dissolved in 190 mL dioxane and2,3-dichloro-5,6-dicyanobenzoquinone was added (10.9 g, 48 mmol). Themixture was refluxed under argon for 2 days. The reaction mixture wasthen cooled to room temperature, poured in 600 mL saturated aqueoussodium carbonate solution and stirred at 65° C. for 30 min. The mixturewas then cooled to room temperature, the precipitation was filtered andwashed with water and dichloromethane.

Yield: 2 g (68%). ¹H NMR (500 MHz, CD₂Cl₂) δ (ppm): 9.80 (d, J=8.0, 2H),8.00-7.68 (m, 10H), 7.53 (d, J=9.2, 2H), 7.45-7.34 (m, 2H).

Fourth Step:

Synthesis of 4,4″-bis(dibenzo[c,h]acridin-7-yl)-1,1′:4′,1″-terphenyl(7). All manipulations were carried out in air, without any furtherpurification of commercial solvents/chemicals.

6 (700 mg, 1.61 mmol), 1,4-phenylenediboronic acid (146 mg, 0.88 mmol),Palladium tetrakis triphenylphoshine (186 mg, 0.16 mmol) and potassiumcarbonate (1.34 g, 9.66 mmol) were introduced in a flask together with17 mL toluene, 8.8 mL ethanol and 2.6 mL distilled water. This mixtureis stirred at 80° C. during 24 hours before being filtered. The solid isthen washed with hexane, water and some mL of chloroform before beingdried.

Yield: 200 mg (20%).

Example 3 Synthesis of

First Step:

Synthesis of (E)-2-(3-bromobenzylidene)-3,4-dihydronaphthalen-1(2H)-one(8). All manipulations were carried out in air, without any furtherpurification of commercial solvents/chemicals.

A 250 mL flask was charged with tetralone (5.2 g, 35.6 mmol) and3-bromobenzaldehyde (8.51 g, 56 mmol). This was dissolved in warmtetrahydrofuran (20 mL), and to this yellow solution was slowly added a4 wt % solution of KOH in methanol (160 mL). The reaction was stirredfor 4 days at room temperature. The mixture was concentrated and reducedto approx 10% vol. The residue was filtered and washed with MTBE (3*50mL), dried, to afford a light yellow powder (10.3 g, 92%).

NMR: 1H NMR (500 MHz, CD2Cl2) δ 8.01 (dd, J=64.7, 65.4, 2H), 7.71-6.92(m, 8H), 3.39-2.64 (m, 4H).

Second Step:

Synthesis of 7-(3-bromophenyl)-5,6,8,9-tetrahydrodibenzo[c,h]acridine(9). All manipulations were carried out under argon.

4 (10.2 g, 32.6 mmol) and tetralone (4.52 g, 30.9 mmol) are introducedin a flask together with BF3.Et2O (4.7 mL, 37.1 mmol). The mixture isstirred at 100° C. for 4 hours and cooled to room temperature. Et₂O wasadded (70 mL) and the mixture is stirred for an additional hour. Theprecipitate is filtered and washed with Et₂O (20 mL). This powder (5.6g) is then introduced at 0° C. in a flask together with anammonia-ethanol solution. The mixture was allowed to stir at roomtemperature for 5 h, the solid was filtered and washed several timeswith ethanol.

4.5 g (33% yield) of a white powder was obtained.

Third Step:

Synthesis of 7-(3-bromophenyl)dibenzo[c,h]acridine (10). Allmanipulations were carried out under argon and with dry solvents.

2 (4.49 g, 10.2 mmol) was dissolved in 220 mL dioxane and2,3-dichloro-5,6-dicyanobenzoquinone was added (14.3 g, 63 mmol). Themixture was refluxed under argon for 2 days. The reaction mixture wasthen cooled to room temperature, poured in 700 mL saturated aqueoussodium carbonate solution and stirred at 65° C. for 30 min. The mixturewas then cooled to room temperature; the precipitation was filtered andwashed with water and dichloromethane.

Yield: 3.3 g (74%).

¹H NMR (500 MHz, CD₂Cl₂) δ (ppm): 9.80 (d, J=8.1, 2H), 8.01-7.63 (m,11H), 7.61-7.40 (m, 4H).

Fourth Step:

Synthesis of 7-(3-(pyren-1-yl)phenyl)dibenzo[c,h]acridine (11). Allmanipulations were carried under argon.

10 (700 mg, 1.61 mmol), pyren-1-ylboronic acid (434 mg, 1.76 mmol),Palladium tetrakis triphenylphoshine (186 mg, 0.16 mmol) and potassiumcarbonate (1.34 g, 9.66 mmol) were introduced in a flask together with17 mL toluene, 8.8 mL ethanol and 2.6 mL distilled water. This mixtureis stirred at 80° C. during 24 hours before being filtered. The solid isthen washed with hexane, water and some mL of chloroform before beingdried.

Yield: 392 mg (44%).

Example 4 Synthesis of

Fourth Step:

Synthesis of (4-(dibenzo[c,h]acridin-7-yl)phenyl)diphenylphosphine oxide(15). All manipulations were carried under argon.

6 (2.84 g, 5.11 mmol) was solved in 40 mL THF. The solution was cooleddown to −78° C. and n-BuLi was added drop wise within 20 min (2.5 Mol/L,3.5 mL, 8.68 mmol), and then stirred at that temperature for 1 hour. Thetemperature is then let rise up to −50° C., and diphenylphosphinechloride (1.13 g, 5.11 mmol) was added and the mixture was stirredovernight at Room temperature. The reaction was then quenched withMethanol (25 mL), and the solvents were evaporated. The residue wassolved in 40 mL dichloromethane and Water peroxide is then added (8 mLH₂O₂ aq.) and stirred overnight. The reaction is then washed severaltimes with 50 mL Brine, the organic phase was then dried and evaporated.The crude product is purified via column chromatography (SiO₂,Dichloromethane, then DCM/MeOH 97:3). The obtained foamy product is thenwashed with 200 mL MTBE.

Yield: 1.6 g (43%)

HPLC: >97%

NMR: 31P NMR (CDCl₃, 121.5 MHz): δ (ppm): 29 (m).

Example 5

Fourth Step:

Synthesis of7-(4′-(1-phenyl-1H-benzo[d]imidazol-2-yl)-[1,1′-biphenyl]-4-yl)dibenzo[c,h]acridine(16). All manipulations were carried under argon.

6 (2.1 g, 4.8 mmol),1-phenyl-2-(4-(4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)phenyl)-1H-benzo[d]imidazole(3.8 g, 9.6 mmol), Palladium tetrakis triphenylphoshine (830 mg) and 17mL of a 1M potassium carbonate solution in water were introduced in aflask together with 35 mL degassed toluene. This mixture is stirred at80° C. during 36 hours before being let cooled to room temperature andfiltered. The solid is then dissolved in dichloromethane (600 mL) andfilter over a Celite pad. The volatiles are removed by rotaryevaporation and the solid is then dried overnight in a vacuum oven.

Yield: 1.2 g (40%)

HPLC>98%.

Example 6

6 (3 g, 6.9 mmol),1-phenyl-2-(4-(4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)phenyl)-1H-benzo[d]imidazole(3.3 g, 10.36 mmol), Palladium tetrakis triphenylphoshine (1.2 g) and 30mL of a 1M potassium carbonate solution in water were introduced in aflask together with 100 mL toluene. This mixture is stirred at 95° C.during 48 hours before being let cooled to room temperature and filteredwith a paper filter. The solid is then washed with toluene, and theobtain grey solid is dissolved in 500 ml of hot (150° C.) xylene, thissuspension is filtered over a celite pad and the volatiles are thenremoved by rotary evaporation. The obtained solid is then dried in avacuum oven. Yield: 2.4 g (65%).

HPLC: >98%

Example 7 Synthesis of

First Step:

Synthesis of(E)-2-(4-methoxybenzylidene)-3,4-dihydronaphthalen-1(2H)-one (15). Allmanipulations were carried out in air, without any further purificationof commercial solvents/chemicals.

A mixture of p-methoxybenzaldehyde (10.00 g, 73.4 mmol, 1.3 eq) and1-tetralone (8.24 g, 56.4 mmol, 1 eq) was dissolved in tetrahydrofurane(30 mL) and a methanolic solution of potassium hydroxide (4% solution,250 mL, 7.9 g KOH, 141 mmol, 2.5 eq) was added dropwise over a 15minutes period to the stirred solution. The mixture was stirred atambient temperature for three days and the formed precipitate wasseparated by filtration and purified by washing with MTBE. After dryingin vacuo a pale yellow solid (8.57 g, 60% yield, GC-MS purity 99%) wasobtained. The filtrate was reduced to a quarter of its volume and asecond fraction (3.7 g, 26% yield, GC-MS purity 100%) could be isolatedafter filtration and washing with a low amount of methanol and a higheramount of MTBE. The over-all yield was 86% and the product was directlyused in the next step without any further purification.

Second Step:

Synthesis of7-(4-methoxyphenyl)-5,6,8,9-tetrahydrodibenzo[c,h]xanthen-14-iumtetra-fluoroborate (16). All manipulations were carried out under argon.

In an inert argon atmosphere (diethyloxonio)trifluoroborate (7.83 g, 7.0mL, 55.2 mmol, 1.2 eq) was added dropwise to a stirred mixture of(E)-2-(4-methoxybenzylidene)-3,4-dihydronaphthalen-1(2H)-one (15) (12.20g, 46.2 mmol, 1 eq) and 1-tetralone (6.73 g, 46.0 mmol, 1 eq). Aftercomplete addition the mixture was heated at 100° C. for 5½ hours andthen cooled to room temperature. Diethylether (50 mL) was addedand—after stirring over a 30 minutes period—the product was isolated byfiltration and purified by washing with diethylether. After drying invacuo an ochre solid was obtained. The product was used in the next stepwithout any further purification.

Yield: 6.66 g (30%)

Third Step:

Synthesis of 7-(4-methoxyphenyl)-5,6,8,9-tetrahydrodibenzo[c,h]acridine(17). All manipulations were carried out in air, without any furtherpurification of commercial solvents/chemicals.

16 (6.63 g, 13.9 mmol, 1 eq) was suspended in ethanol (175 mL,denaturated with 1% methylethyl ketone). Under vigorously stirring anammonia solution (32% aqueous solution, 18.3 g NH₃, 1.075 mol, 77 eq)was added dropwise and the mixture was stirred at ambient temperaturefor 171/2 hours to obtain a lavender suspension. The product wasisolated by filtration and purified by successive washing with ethanol(250 mL). A lavender solid (91% yield) could be obtained. The compoundwas directly used in the next step without any further purification.

Yield: 4.93 g (91%)

HPLC: 91% (and 5% of a constitution isomer)

Fourth Step:

Synthesis of 7-(4-methoxyphenyl)dibenzo[c,h]acridine (18). Allmanipulations were carried out under argon.

In an inert argon atmosphere 17 (4.93 g, 12.7 mmol, 1 eq) was dissolvedin abs. 1,4-dioxane (300 mL, dried over sodium) under vigorouslystirring at 80° C. 2,3-dichloro-5,6-dicyano-p-benzoquinone (DDQ, 17.25g, 76 mmol, 6 eq) was added in portions over a 5 minutes period and theDDQ-vessel was flushed with abs. dioxane (20 mL). The almost blackmixture was stirred at 80° C. for two days maintaining the inertatmosphere. After cooling to room temperature the reaction mixture wascarefully added to 500 mL of an aqueous saturated sodium carbonatesolution and the reaction vessel was flushed with saturated Na₂CO₃solution (250 mL) and water (200 mL). After stirring of the mixture at65° C. for 75 minutes the precipitate was allowed to settle down and theproduct was isolated by filtration and purified by multiple slurry ofthe solid in water (overall ca. 1000 mL). After drying of the crudeproduct in vacuo at 40° C. overnight the solid was suspended inmethylene chloride (20 mL), stirred for 45 minutes, isolated byfiltration and washed with DCM (2×20 mL) and dried overnight. 3.53 g ofan ochre solid (72% yield) could be obtained in a 99.5% HPLC purity.Further purification of the material was possible by gradientsublimation (initial amount: 1.00 g, sublimation yield: 67%).

Fifth Step:

Synthesis of 4-(dibenzo[c,h]acridin-7-yl)phenol (19). All manipulationswere carried out under argon.

In a pressure vessel a mixture of 18 (1.00 g, 2.6 mmol, 1 eq) andpyridiniumhydrochloride (1.75 g, 15.1 mmol, 5.8 eq) was heated to 210°C. under an inert atmosphere and vigorously stirred at this temperatureover a three days period. The mixture was allowed to cool down to roomtemperature. The solidified melt was dissolved in chloroform (50 mL) andwater (50 mL) and treated in an ultrasonic bath for 5 minutes. Thelayers were separated and the aqueous layer was extracted withchloroform (3×50 mL). Afterwards, the combined organic layers werewashed with a saturated aqueous sodium hydrogencarbonate solution (5×50mL) followed by water (3×50 mL) and dried over magnesium sulphate.Evaporation of the solvent at 40° C. led to an old rose coloured solid.The product was directly used in the next step without any furtherpurification.

Yield: 810 mg (84%)

HPLC: 98%

Sixth Step:

Synthesis of7-(4-((6-(1,1-di(pyridin-2-yl)ethyl)pyridin-2-yl)oxy)phenyl)dibenzo-[c,h]acridine(21). All manipulations were carried out under argon.

In an inert argon atmosphere a mixture of 19 (700 mg, 1.9 mmol, 1 eq),potassium carbonate (1.31 g, 9.5 mmol, 5 eq) and 20 (531 mg, 1.9 mmol, 1eq) was placed into a pressure vessel. The vessel was sealed and themixture was heated to 200° C. under vigorously stirring. After five daysreaction at this temperature the mixture was allowed to cool down andthen poured into ice/water (300 mL). The pressure vessel was flushedwith water (2×50 mL) and the solution was extracted with dichloromethane(3×100 mL) until the organic layer remained almost colourless.Afterwards, the combined organic layers were washed with water (3×500mL) followed by 2 N aqueous hydrogen chloride solution (2×100 mL) andwater (300 mL) again. After drying over magnesium sulphate the solventwas removed in vacuo at 40° C. The product was precipitated from theremaining solution by addition of water (1.000 mL), stirring over 10minutes and isolated by filtration, washing with water (500 mL) anddrying overnight at 40° C. in a vacuum dry box. An ochre solid (0.94 g,78% yield, HPLC purity 99.2%) could be obtained.

Further purification of the material was performed by gradientsublimation (initial amount: 0.93 g, sublimation yield: 43%).

Example of Conductive Layers

The conductivity of a doped layer consisting of material of structure 1in table 1 doped with 5% of W(hpp)₄(tetrakis(1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidinato)ditungsten(II)) was measured at room temperature and was 1.39×10 S/cm.

The conductivity of a doped layer consisting of material of structure 18in table 1 doped with 5% of W(hpp)₄ was measured at room temperature andwas 3×10⁻⁷ S/cm.

The conductivity of a doped layer consisting of material of structure 3in table 1 doped with 5% of W(hpp)₄ was measured at room temperature andwas 1.2×10⁻⁵ S/cm.

The conductivity of a doped layer consisting of material of structure 2in table 1 doped with 5% of W(hpp)₄ was measured at room temperature andwas 9.95×10⁻⁶ S/cm.

Example of an OLED

The compounds from examples 1-3 were successfully employed as electrontransport materials in OLEDs. An exemplary device structure is givenbelow.

Device 1

An OLED was fabricated with the following procedure: A glass substratecoated with ITO (90 nm thick, pre-patterned) was cleaned in organicsolvents in conventional ultra-sound. Afterwards the substrate wastreated with ozone plasma for 5 minutes. After the cleaning, thesubstrate was transferred to vacuum. The organic layers were depositedin high vacuum (base pressure lower than 10⁻³ Pa) by conventional VTE(Vacuum thermal evaporation). The deposited area was defined by a shadowmask, keeping some area of the ITO surface free so that an electricalcontact for the measurements could (later on) be established. Theorganic layer sequence over the ITO layer is: 50 nm thick NPD layerdoped with F4TCNQ; 10 nm thick non-doped NPD layer, 20 nm blue emitterhost layer doped with a fluorescent emitter; 10 nm ETL (structure 4), 60nm ETL (structure 4) doped with W(hpp)₄ (5% in weight). A 100 nmaluminum layer was deposited as cathode. The OLED reached 1000 cd/m² at3.59 V.

Comparative Example

Using the following material (14-(naphthalen-2-yl)dibenzo[a,j]acridine(structure 1b),

which structure is close to the claimed material as an ETL the followingperformances were obtained:

Device 2

An OLED was fabricated with the following procedure: A glass substratecoated with ITO (90 nm thick, pre-patterned) was cleaned in organicsolvents in conventional ultra-sound. Afterwards the substrate wastreated with ozone plasma for 5 minutes. After the cleaning, thesubstrate was transferred to vacuum. The organic layers were depositedin high vacuum (base pressure lower than 10⁻³ Pa) by conventional VTE(Vacuum thermal evaporation). The deposited area was defined by a shadowmask, keeping some area of the ITO surface free so that an electricalcontact for the measurements could (later on) be established. Theorganic layer sequence over the ITO layer is: 50 nm thick NPD layerdoped with F4TCNQ; 10 nm thick non-doped NPD layer, 20 nm blue emitterhost layer doped with a fluorescent emitter; 10 nm ETL (structure 1b),60 nm ETL (structure 1b) doped with W(hpp)₄ (5% in weight). A 100 nmaluminum layer was deposited as cathode. The OLED reached 1000 cd/m² at4.25 V.

Compounds of structure 1-33 successfully passed sublimation, and devicetests, showing a low operating voltage in OLEDs, high power efficiency,and long lifetime.

The features disclosed in the foregoing description and in the claimsmay, both separately and in any combination thereof, be material forrealizing the invention in diverse forms thereof.

The invention claimed is:
 1. An electronic device comprising at leastone organic semiconducting material according to formula (I):

wherein R₁₋₄ are independently selected from H, halogen, CN,C₁-C₂₀-alkyl, C₁-C₂₀-heteroalkyl, C₆-C₂₀-aryl, C₅-C₂₀-heteroaryl,C₁-C₂₀-alkoxy, or C₆-C₂₀-aryloxy, wherein each C₁-C₂₀-alkyl,C₁-C₂₀-heteroalkyl, C₆-C₂₀-aryl, C₅-C₂₀-heteroaryl, C₁-C₂₀ alkoxy, orC₆-C₂₀-aryloxy is unsubstituted or substituted, wherein Ar is selectedfrom, substituted or unsubstituted, C₆-C₂₀-aryl or C₅-C₂₀-heteroaryl,and R₅ is selected from substituted or unsubstituted C₆-C₂₀-aryl,substituted or unsubstituted C₅-C₂₀-heteroaryl, H, F, or

wherein R₁₋₄, are as previously defined; wherein the device has alayered structure and at least one layer comprises at least one compoundaccording to formula (I).
 2. The electronic device according to claim 1,wherein Ar and R₁₋₄ are independently selected from C₆-C₂₀ aryl orC₅-C₂₀-heteroaryl.
 3. The electronic device according to claim 1,wherein R₅ is H or F, and R₅ and Ar are a moiety selected from


4. The electronic device according to claim 1, wherein Ar is selectedfrom


5. The electronic device according to claim 1, wherein the organicsemiconducting material is doped by an n-dopant.
 6. The electronicdevice according to claim 5, wherein the organic semiconducting materialis doped by an organic n-dopant having a HOMO energy level which is morepositive than −3.3 eV.
 7. The electronic device according to claim 1,wherein the device is an electronic, optoelectronic orelectroluminescent device having an electronically functionallyeffective region, wherein the electronically effective region comprisesat least one compound according to formula (I).
 8. The electronic deviceaccording to claim 1, wherein the device is an organic light-emittingdiode, a field-effect transistor, a sensor, a photodetector, an organicthin-film transistor, an organic integrated circuit, an organiclight-emitting transistor, a light-emitting electrochemical cell, or anorganic laser diode.
 9. A compound according to formula (I):

wherein R₁₋₄ are independently selected from H, halogen, CN,C₁-C₂₀-alkyl, C₁-C1220-heteroalkyl, C₆-C₂₀-aryl, C₅-C₂₀-heteroaryl,C₁-C₂₀-alkoxy, or C₆-C₂₀aryloxy, wherein each C₁-C₂₀-alkyl,C₁-C₂₀-heteroalkyl, C₁-C₂₀-aryl, C₅-C₂₀-heteroaryl, C₁-C₂₀-alkoxy, orC₆-C₂₀-aryloxy is unsubstituted or substituted, wherein R₅ is H, and Aris

wherein Ar is selected from unsubstituted C₆-C₂₀-aryl orC₅-C₂₀-heteroaryl, and wherein R₅ is selected from F, substituted orunsubstituted C₆-C₂₀-aryl, substituted or unsubstitutedC₅-C₂₀-heteroaryl in which one or two carbon atoms is substituted by Nor S,

wherein R₁-R₄ are as previously defined,


10. A compound according to formula (I):

wherein R₁₋₄ are independently selected from H, halogen, CN,C₁-C₂₀-alkyl, C₁-C₂₀-heteroalkyl, C₆-C₂₀-aryl, C₅-C₂₀-heteroaryl,C₁-C₂₀-alkoxy, or C₆-C₂₀-aryloxy, wherein each C₁-C₂₀-alkyl,C₁-C₂₀-heteroalkyl, C₆-C₂₀-aryl, C₅-C₂₀-heteroaryl, C₁-C₂₀-alkoxy, orC₆-C₂₀-aryloxy is unsubstituted or substituted, wherein Ar is selectedfrom, substituted or unsubstituted, C₆-C₂₀-aryl or C₅-C₂₀-heteroaryl,and wherein R₅ is H or F and combines with Ar to a moiety selected from


11. A compound having one of the following structures: